Effect of solar cell structure on the radiation resistance of an InP solar cell - Université Paris-Est-Créteil-Val-de-Marne Access content directly
Conference Papers Year : 2020

Effect of solar cell structure on the radiation resistance of an InP solar cell

Abstract

Effects of electron irradiation-induced deep level defects have been studied on both n/p and p/n Indium Phosphide (InP) solar cells with very thin emitters. The simulation results reveal that the n/p structure offers a somewhat better short-circuit current and that the p/n structure renders an improved open-circuit voltage, not only before electron irradiation but also after 1 MeV electron irradiation with 5×1015 electrons per cm2 fluence. Further, the calculated findings highlight that the n/p solar cell structure is more resistant than that of a p/n structure.
Fichier principal
Vignette du fichier
Mazouz 2018.pdf (1.44 Mo) Télécharger le fichier
Origin : Files produced by the author(s)

Dates and versions

hal-04140078 , version 1 (24-06-2023)

Identifiers

Cite

Halima Mazouz, Abderrahmane Belghachi, Pierre-Olivier Logerais. Effect of solar cell structure on the radiation resistance of an InP solar cell. REEE 2018, International Conference on Renewable Energy and Environment Engineering - REEE, Oct 2018, Paris, France. pp.01005, ⟨10.1051/e3sconf/202019101005⟩. ⟨hal-04140078⟩

Collections

UPEC CERTES
3 View
14 Download

Altmetric

Share

Gmail Facebook X LinkedIn More